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Journal of Materials
Volume 2013 (2013), Article ID 128986, 5 pages
Research Article

Reactive Pulsed Laser Deposition of Titanium Nitride Thin Films: Effect of Reactive Gas Pressure on the Structure, Composition, and Properties

1Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu 603102, India
2Department of Materials Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India
3President, PSG Institutions, Coimbatore, Tamil Nadu 641004, India

Received 19 November 2012; Accepted 13 December 2012

Academic Editor: Ram Gupta

Copyright © 2013 R. Krishnan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Titanium nitride (TiN) thin films were deposited by reactive pulsed laser deposition (RPLD) technique. For the first time, the composition evaluated from proton elastic backscattering spectrometry, in a quantitative manner, revealed a dependence on the partial pressure of nitrogen from 1 to 10 Pa. Grazing incidence-XRD (GI-XRD) confirmed the formation of predominantly nanocrystalline TiN phase with a crystallite size of around 30 nm. The hardness showed maximum value of ~30 GPa when the composition is near stoichiometric and the friction coefficient was found to be as low as 0.3. In addition, a systematic optical response was observed as a function of deposition pressure from the surface of the TiN films using spectroscopic ellipsometry.