A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

<table>The hole mobility <svg height="15.825" id="M260" style="vertical-align:-6.49603pt" version="1.1" viewbox="0 0 17.237499 15.825" width="17.237499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> versus temperature, using the same calculation parameters used in Figures <a href="../fig3/">3</a>–<a href="../fig5/">5</a> (see Section <a href="https://static.hindawi.com/articles/jma/volume-2013/260982/figures/#sec1">1</a>—Models).</table>

Journal of Materials

fig9

Figure 9

Figure 9: A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device 