Research Article

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 12

Scattering mechanism involved in calculation of GaAs samples properties.

No.ParameterGaAs
4.25 μm
GaAs
1.7 μm
GaAs
2.6 μm
GaAs
2.4 μm

1Mobility [cm2/V · s] , , , , , , , ,