Journal of Materials

Research Article

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 7

Conductance components for InAs samples at 300 K.
No.Parameter300 K
InAs InAs InAs InAs
9 μm4.7 μm5.6 μm4  μm
1 [cm−3]4.18 · 10159.62 · 10154.97 · 10164.09 · 1017
2 [cm2/V · s]1600015800145808400
3 [1/Ω cm]10.724.35116.08550
4 1111
5 [cm−3]5.62 · 10158.13 · 10154.27 · 10161.45 · 1017
6 [cm2/V · s]162401561114565.79090
7 [1/  cm]14.620.3399.64 211
8 1.360.8350.8580.38
9 [cm−3]−1.43 · 1015−7.56 · 10147.073 · 10152.64 · 1017
10 [cm2/V · s]−4430−1109.672275.616535
11 [1/  cm]1.010.1342.58698
12 0.0950.00550.0221.27
13 [cm−3]4.5 · 10141.862 · 1015−1.51 · 1015 *
14 [cm2/V · s]19653636.222302.22 *
15 [1/Ω cm]0.141.085−0.56 *
16 0.0130.0445−0.048 *
17 [cm−3]4.64 · 10159.24 · 10154.83 · 10164.09 · 1017
18 [S]9.63 · 10−31.145 · 10−26.5 · 10−222.0 · 10−2
19 [S]1.314 · 10−29.55 · 10−35.58 · 10−28.44 · 10−2
20 [S]9.09 · 10−46.3 · 10−51.44 · 10−327.92 · 10−2
21 [S]1.26 · 10−45.1 · 10−43.14 · 10−4 *
22 [S]1.417 · 10−21.012 · 10−25.75 · 10−236.36 · 10−2
23 / 1.470.880.881.65