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Journal of Materials
Table of Contents
Journal of Materials
/
2013
/
Article
/
Tab 8
/
Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 8
Scattering mechanism involved in calculation of InGaAs samples properties.
No.
Parameter
In
0.53
Ga
0.47
As
In
0.53
Ga
0.47
As
In
0.53
Ga
0.47
As
In
0.53
Ga
0.47
As
7
μ
m
1.0
μ
m
1.1
μ
m
1.0
μ
m
1
Mobility [cm
2
/V · s]
,
,
,
,
,
,
,
,
,
,
,