Research Article

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 8

Scattering mechanism involved in calculation of InGaAs samples properties.

No.Parameter In0.53Ga0.47As In0.53Ga0.47As In0.53Ga0.47As In0.53Ga0.47As
7 μm1.0 μm1.1 μm1.0 μm

1Mobility [cm2/V · s] , , , , , , , , , , ,