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Journal of Materials
Volume 2014 (2014), Article ID 430410, 8 pages
Research Article

Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

1LMER Laboratory, Faculty of Sciences, University Ibn Zohr, 80001 Agadir, Morocco
2LabSIV Laboratory, Faculty of Sciences, University Ibn Zohr, 80001 Agadir, Morocco
3Institut d’Electronique de Sud, IES, Equipe Micro-Capteurs, Université Montpellier II (CC 075), Place E. Bataillon, Cedex 05, 34095 Montpellier, France

Received 6 December 2013; Accepted 6 February 2014; Published 10 March 2014

Academic Editor: Ram Gupta

Copyright © 2014 Abdellah Boulouz et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST) semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T)) at room temperature for Bi2Te3, and (Bi1−xSbx)2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of  mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.