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Journal of Materials
Volume 2014, Article ID 479808, 5 pages
http://dx.doi.org/10.1155/2014/479808
Research Article

Thermal Transport between Graphene Sheets and SiC Substrate by Molecular-Dynamical Calculation

1Henan University of Technology, Zhengzhou 450007, China
2Southeast University, Nanjing 211102, China

Received 4 January 2014; Accepted 7 February 2014; Published 23 April 2014

Academic Editor: Necmettin Maraşlı

Copyright © 2014 Zan Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Using nonequilibrium molecular dynamics, we investigate the mechanisms of thermal transport across SiC/graphene sheets. In simulations, 3C-, 4H-, and 6H-SiC are considered separately. Interfacial thermal resistances between Bernal stacking graphene sheets and SiC (Si- or C-terminated) are calculated at the ranges of 100 K~700 K. The results indicate, whether Si-terminated or C-terminated interface, the interfacial thermal resistances of 4H- and 6H-SiC have similar trends over temperatures. Si-terminated interfacial thermal resistances of 3C-SiC are higher than those of 4H- and 6H-SiC in a wide temperature range from 100 K to 600 K. But, for C-rich interface, this range is reduced from 350 K to 500 K.