Table of Contents
Journal of Materials
Volume 2016, Article ID 6123268, 7 pages
http://dx.doi.org/10.1155/2016/6123268
Research Article

Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand 835215, India

Received 30 April 2016; Accepted 17 July 2016

Academic Editor: Te-Hua Fang

Copyright © 2016 Swapnil Sourav et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been explored in this paper. Phase change random access memory (PCRAM) is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST) materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3) material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported model has been also validated to act as a memory cell by associating it with a read/write circuit proposed in this work. Simulation results demonstrate impressive retentivity and low power consumption by requiring a set pulse of 208 μA for a duration of 100 μs to set the PCRAM in crystalline state. Similarly, a reset pulse of 11.7 μA for a duration of 20 ns can set the PCRAM in amorphous state. Modeling of In2Se3 based PCRAM has been done in Verilog-A and simulation results have been extensively verified using SPICE simulator.