Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

Figure 1

The structure of simulated device: (a) SG-GNRFET and (b) DG-GNRFET. The SiO₂ gate insulator is 2 nm thick with a relative dielectric constant . Armchair GNR with and  eV is used as a channel material, which is 15 nm long and 1.35 nm wide.

(a)

(b)