Study on the Effect of Nano-SiO<sub>2</sub> in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Yuling, Liu; Juan, Wang; Ming, Sun; Chenglin, Liu

doi:https://doi.org/10.1155/JNM/2006/25467

Journal of Nanomaterials

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Volume 2006 | Article ID 025467 | https://doi.org/10.1155/JNM/2006/25467

Study on the Effect of Nano-SiO₂ in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Liu Yuling,¹Wang Juan,¹Sun Ming,¹and Liu Chenglin¹

Received25 Dec 2005

Revised07 Sept 2006

Accepted21 Nov 2006

Published17 Jan 2007

Abstract

Both process and mechanical of silicon substrate chemical mechanical polishing (CMP) are studied in detail, and the effects of experiments designed indicate that nano-SiO2 grinding particles seem to be acted as catalyzer besides the grinding action during the CMP process. This is different from the traditional function. As a result, in the condition of low pH, the nano-SiO2 slurry can be recycled. In the meanwhile, the removal rate can gain stability and pH value does not change obviously.

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Copyright

Copyright © 2006 Liu Yuling et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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