Photoluminescence of Silicon Nanocrystals in Silicon Oxide

Ferraioli, L.; Wang, M.; Pucker, G.; Navarro-Urrios, D.; Daldosso, N.; Kompocholis, C.; Pavesi, L.

doi:https://doi.org/10.1155/2007/43491

Journal of Nanomaterials

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Luminescent Nanomaterials

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Review Article | Open Access

Volume 2007 | Article ID 043491 | https://doi.org/10.1155/2007/43491

Photoluminescence of Silicon Nanocrystals in Silicon Oxide

L. Ferraioli,¹M. Wang,^2,3G. Pucker,²D. Navarro-Urrios,¹N. Daldosso,¹C. Kompocholis,²and L. Pavesi¹

Academic Editor: Tran Kim Anh

Received15 May 2007

Accepted17 Nov 2007

Published17 Dec 2007

Abstract

Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thus, only middle size nanocrystals have high emission efficiency. Interestingly, the layer thickness affects the nucleation and growth kinetics so changing the luminescence efficiency.

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Copyright

Copyright © 2007 L. Ferraioli et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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