Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

Kumar, Pushpendra; Huber, Patrick

doi:https://doi.org/10.1155/2007/89718

Journal of Nanomaterials

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Surface Nanoscience

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Volume 2007 | Article ID 089718 | https://doi.org/10.1155/2007/89718

Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

Pushpendra Kumar¹and Patrick Huber¹

Academic Editor: Rakesh K. Joshi

Received26 Dec 2006

Accepted04 Apr 2007

Published06 Jun 2007

Abstract

The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

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Copyright

Copyright © 2007 Pushpendra Kumar and Patrick Huber. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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