Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2008, Article ID 250370, 8 pages
Research Article

Selective Growth of 𝜶-Al2O3 Nanowires and Nanobelts

1Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario, Canada N6A 5B9
2School of Materials, The University of Manchester, Manchester M60 1QD, UK
3Nanomaterials for Clean Energy Group, General Motors Research and Development Center, Warren, MI 48090-9055, USA

Received 4 February 2008; Revised 22 May 2008; Accepted 25 June 2008

Academic Editor: Lian Gao

Copyright © 2008 Yong Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report the selective growth of 𝛼-Al2O3 nanowires and nanobelts via a catalyst-free chemical vapor deposition process under ambient pressure. By controlling the flow rates of the carrier gas, high-yield production of uniform alumina nanowires with diameter distribution (100 nm–200 nm) was achieved at a high growth rate over 200 𝜇m/hour. Alumina nanobelts with variable width were also synthesized by modulating the carrier gas purge process. Further, the effects of temperatures and carrier gas flow rates on the growth of alumina nanostructures were also investigated. Oxygen partial pressure and supersaturation level of the aluminum suboxide are thought to be important factors in the formation process of the alumina nanowires or nanobelts. The typical growth of the alumina nanowires and nanobelts can be ascribed to vapor-solid (VS) mechanism.