Chromium-Induced Nanocrystallization of a-Si Thin Films into the Wurtzite Structure
Figure 1
Optical micrograph of (a) a-Si thin film on
BSG substrates showing shallow saucer pits (S-pits). (b) Cr/a-Si/BSG after
annealing at 500°C for 20 minutes. (c) 280 nm thick a-Si film with
30 nm of Cr overlayer annealed at 500°C for 20 minutes.