Toward a Detailed Understanding of Si(111)- Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations
Figure 12
STM images of 0.45 ML Ge on the Si(111)-7 7 surface. The
substrate temperature was held at 300 for the Ge deposition. Local
reconstruction (marked by the
white squares) emerges inside the Ge island in (a) and the Si(111)-7 7 substrate in
(b). (c) High-resolution image of triangle domain. (d) Schematic of the atomic
arrangement of the domain surrounded by FHUC
triangles. (e) Schematic top and side views of the atomic arrangement for the reconstruction with the
adatoms at the sites. The
images are recorded at 2.0 V, 0.10 nA in (a), and 1.4 V, 0.20 nA in (b) and
(c). Image sizes: (a) 236 nm 236 nm, (b) 123
nm 123 nm, and (c)
22 nm 24 nm.
