Journal of Nanomaterials / 2009 / Article / Fig 1

Research Article

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Figure 1

NW growth rate as a function of the equivalent Si doping level. Dashed line shows the nominal deposition rate. Insets show SEM images of undoped (left) and heavily doped (right) InP NWs.
435451.fig.001

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