Journal of Nanomaterials / 2009 / Article / Tab 2

Research Article

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Table 2

Resistivity of inhomogeneously doped NWs.

Contacts i-j Diameter (nm)Separation (nm)Resistance Resistivity ( cm)Error margin

1-2704601109.5× 20%
2-3605102001.2× 20%
3-44042521006.3× 20%

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