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Journal of Nanomaterials
Volume 2009, Article ID 728957, 7 pages
http://dx.doi.org/10.1155/2009/728957
Research Article

Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon

1Physik der Kondensierten Materie, TU Braunschweig, 38106 Braunschweig, Germany
2Institut für Elektrische Messtechnik und Grundlagen der Elektrotechnik, TU Braunschweig, 38106 Braunschweig, Germany

Received 8 June 2008; Revised 28 August 2008; Accepted 8 January 2009

Academic Editor: Rakesh Joshi

Copyright © 2009 Pushpendra Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Pushpendra Kumar, Peter Lemmens, Manash Ghosh, Frank Ludwig, and Meinhard Schilling, “Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon,” Journal of Nanomaterials, vol. 2009, Article ID 728957, 7 pages, 2009. https://doi.org/10.1155/2009/728957.