Origin of the Difference in the Resistivity of As-Grown Focused-Ion- and Focused-Electron-Beam-Induced Pt Nanodeposits

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="936863.fig.006a" src="https://static.hindawi.com/articles/jnm/volume-2009/936863/figures/936863.fig.006a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>FIBID Pt</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="936863.fig.006b" src="https://static.hindawi.com/articles/jnm/volume-2009/936863/figures/936863.fig.006b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>FEBID Pt</td></tr></table></td></tr></table>

<table>(a) Temperature variation of the resistance of a FIBID Pt nanowire showing a quite flat dependence. The inset shows the analysis of data in the form of <i>w</i> versus <svg height="16.65" id="M48" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 28.4 16.65" width="28.4" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,16.588)"><path d="M649 676l-22 -187l-33 -2q3 56 -12 94q-8 20 -31.5 26.5t-86.5 6.5h-74l-90 -491q-4 -23 -6 -36.5t1 -25t7 -16.5t18 -9t27 -5t41 -3l-6 -28h-286l4 28q68 5 84 18.5t28 76.5l94 491h-55q-74 0 -100.5 -6t-41.5 -23q-24 -29 -54 -98l-32 1q32 98 53 188h22q7 -18 15 -22
t37 -4h417q23 0 33.5 5t25.5 21h23z" id="x1D447"></path></g>
<g transform="matrix(.012,-0,0,-.012,11.388,8.425)"><path d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" id="x31"></path></g><g transform="matrix(.012,-0,0,-.012,17.099,8.425)"><path d="M368 703l-264 -866h-60l265 866h59z" id="x2F"></path></g><g transform="matrix(.012,-0,0,-.012,22.001,8.425)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
</svg>. (b) Temperature variation of the resistance of a FEBID Pt nanowire, showing a semiconducting dependence. The inset shows the analysis of data in the form of <svg height="15.1125" id="M49" style="vertical-align:-2.3205pt" version="1.1" viewbox="0 0 43.462502 15.1125" width="43.462502" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path d="M238 0h-223v26q48 5 60 17t12 61v473q0 50 -10.5 60.5t-58.5 15.5v24q73 8 148 35v-608q0 -49 11.5 -61t60.5 -17v-26z" id="x6C"></path></g><g transform="matrix(.017,-0,0,-.017,4.363,12.162)"><path d="M524 0h-209v26q44 5 55 18t11 65v167q0 114 -91 114q-50 0 -109 -51v-235q0 -50 10 -61.5t55 -16.5v-26h-217v26q51 5 62 17t11 61v206q0 47 -9.5 58.5t-50.5 19.5v23q82 15 139 40v-79l67 47q47 30 83 30q60 0 94.5 -40t34.5 -112v-193q0 -50 10 -61.5t54 -16.5v-26z
" id="x6E"></path></g><g transform="matrix(.017,-0,0,-.017,19.322,12.162)"><path d="M300 -147l-18 -23q-106 71 -159 185.5t-53 254.5v1q0 139 53 252.5t159 186.5l18 -24q-74 -62 -115.5 -173.5t-41.5 -242.5q0 -130 41.5 -242.5t115.5 -174.5z" id="x28"></path></g><g transform="matrix(.017,-0,0,-.017,25.204,12.162)"><path d="M713 296l-5 -25q-47 -7 -59 -20t-23 -72l-15 -79q-9 -48 -3 -74q-15 -3 -55 -13t-63 -15t-59.5 -10t-70.5 -5q-149 0 -243 80t-94 220q0 169 127.5 276.5t336.5 107.5q91 0 206 -36l-10 -165l-29 -1q1 85 -47.5 126t-146.5 41q-153 0 -243.5 -97t-90.5 -242
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</svg> versus <svg height="16.65" id="M50" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 35.375 16.65" width="35.375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,16.588)"><path d="M649 676l-22 -187l-33 -2q3 56 -12 94q-8 20 -31.5 26.5t-86.5 6.5h-74l-90 -491q-4 -23 -6 -36.5t1 -25t7 -16.5t18 -9t27 -5t41 -3l-6 -28h-286l4 28q68 5 84 18.5t28 76.5l94 491h-55q-74 0 -100.5 -6t-41.5 -23q-24 -29 -54 -98l-32 1q32 98 53 188h22q7 -18 15 -22
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<g transform="matrix(.012,-0,0,-.012,11.388,8.425)"><path d="M535 230h-483v50h483v-50z" id="x2212"></path></g><g transform="matrix(.012,-0,0,-.012,18.372,8.425)"><path d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" id="x31"></path></g><g transform="matrix(.012,-0,0,-.012,24.083,8.425)"><path d="M368 703l-264 -866h-60l265 866h59z" id="x2F"></path></g><g transform="matrix(.012,-0,0,-.012,28.986,8.425)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
</svg> (see text for details).</table>

Journal of Nanomaterials

fig6

Figure 6

Figure 6: Origin of the Difference in the Resistivity of As-Grown Focused-Ion- and Focused-Electron-Beam-Induced Pt Nanodeposits 