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Journal of Nanomaterials
Volume 2010, Article ID 746520, 4 pages
http://dx.doi.org/10.1155/2010/746520
Research Article

The Excited Electronic States Calculated for Quantum Dots Grown by the Sol-Gel Technique

1Unité de Physique Quantique, Faculté des Sciences, Avenue de l’Environnement, Monastir 5000, Tunisia
2Laboratoire de Physique des Semi-conducteurs et des Composants Electroniques, Faculté des Sciences, Avenue de l’Environnement, Monastir 5000, Tunisia
3Laboratoire d’Electronique et de Microélectronique, Faculté des Sciences, Avenue de l’Environnement, Monastir 5000, Tunisia
4Unité de Recherche de Mathématiques Appliquées et Physique Mathématiques, Ecole Préparatoire aux Académies Militaires, Avenue Maréchal Tito, Sousse 4029, Tunisia

Received 10 October 2009; Revised 9 January 2010; Accepted 26 February 2010

Academic Editor: Kui Yu

Copyright © 2010 A. Sakly et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The present paper is aimed to investigate theoretically the quantum confinement in -related quantum dots with x the atomic fraction of Zn. For both electrons and holes, we have calculated the excited bound states with use of the spherical geometry model and assuming a finite potential at the boundary. For electrons, calculations were made by using Bessel function as an orthonormal basis. However, for holes, the confined subbands have been calculated based on squared quantum well envelope wave functions. The subband energies were evaluated for both electrons and holes versus zinc composition as well.