Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

<table>Schematic representation of the deposition system IBAE.</table>

Journal of Nanomaterials

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Figure 1

Figure 1: Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 

Figure 1 | Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 