Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

<table>The carrier mobility and carrier concentration of the deposited IMO films with different thicknesses. The carrier mobility values are labeled with solid circles, and the carrier concentration values are labeled with solid triangles.</table>

Journal of Nanomaterials

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Figure 6

Figure 6: Thickness Dependence of Optoelectrical Properties of Mo-Doped In<sub>2</sub>O<sub>3</sub> Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 

Figure 6 | Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation 