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Journal of Nanomaterials
Volume 2011, Article ID 303808, 7 pages
Research Article

GISAXS View of Induced Morphological Changes in Nanostructured CeVO4 Thin Films

1Faculty of Chemistry and Technology, University of Split, Teslina 10, 21000 Split, Croatia
2Rudjer Boskovic Institute, Bijenička 54, 10000 Zagreb, Croatia
3National Institute of Chemistry, Hajdrihova 19, 1000 Ljubljana, Slovenia
4Faculty of Computer and Information Science, University of Ljubljana, Trzaska cesta 1001 Ljubljana, Slovenia
5Sincrotrone Trieste, Strada Statale 14, km 163,5 , in AREA Science Park, 34149 Basovizza, Trieste, Italy

Received 31 May 2010; Revised 11 September 2010; Accepted 30 October 2010

Academic Editor: Quanqin Dai

Copyright © 2011 Magdy Lučić Lavčević et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Nanostructured CeVO4 films, designed for applications in electrochemical cells and electrochromic devices, were obtained on glass substrates by the sol-gel process. An analysis of morphological modifications in these films, induced by ultrasonication, annealing, and introduction of lithium ions, was performed, using the grazing-incidence small-angle X-ray scattering technique (GISAXS). The GISAXS results are discussed and related with complementary examinations of the same films in real space, performed by scanning electron microscopy on a different length scale.