Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

<table>SEM images of InN grown on Si (110) while the deposition gas is (a) 100% N<sub>2</sub>, (b) 75% N<sub>2</sub>-25% Ar, and (c) 50% N<sub>2</sub>-50% Ar.</table>

Journal of Nanomaterials

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Figure 1

Figure 1: Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering 