Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

Table 1

Sputtering condition for InN deposition.

Target	Indium (99.999%)
Target diameter	3 in
Substrate	silicon (110)
RF power	60–70 W
Substrate temperature	Room temperature, 25°C
Target-substrate distance	8 cm
Deposition time	3 hours
Base pressure	2.5×10^−5 Torr
Sputtering pressure	2.2×10^−2 Torr