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Journal of Nanomaterials
Volume 2011, Article ID 654715, 6 pages
Research Article

Mesoporous In2O3: Effect of Material Structure on the Gas Sensing

1Department of Chemistry, College of Science, Shanghai University, Shanghai 200444, China
2State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received 14 September 2010; Revised 10 February 2011; Accepted 26 February 2011

Academic Editor: Claude Estournes

Copyright © 2011 Z. X. Cheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We present a semiconductor gas sensor based on mesoporous In2O3 (m-In2O3). The m-In2O3 was successfully fabricated by a simple sol-gel process, using block copolymer PE6800 as a soft template. The results of gas sensing reveal that the m-In2O3 prepared at room temperature shows higher resistance, which plays the key role in its greater sensitivity. The pore structure of material has an influence on gas adsorption on the material surface, which further affects response-recovery time of gas sensor.