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Journal of Nanomaterials
Volume 2011, Article ID 786763, 7 pages
http://dx.doi.org/10.1155/2011/786763
Research Article

Purity and Defect Characterization of Single-Wall Carbon Nanotubes Using Raman Spectroscopy

1Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan
2Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
3Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8565, Japan
4JST, CREST, Kawaguchi 330-0012, Japan

Received 15 June 2010; Accepted 23 November 2010

Academic Editor: Teng Li

Copyright © 2011 Yasumitsu Miyata et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We investigated the purity and defects of single-wall carbon nanotubes (SWCNTs) produced by various synthetic methods including chemical vapor deposition, arc discharge, and laser ablation. The SWCNT samples were characterized using scanning electron microscopy (SEM), thermogravimetric analysis (TGA), and Raman spectroscopy. Quantitative analysis of SEM images suggested that the G-band Raman intensity serves as an index for the purity. By contrast, the intensity ratio of G-band to D-band (G/D ratio) reflects both the purity and the defect density of SWCNTs. The combination of G-band intensity and G/D ratio is useful for a quick, nondestructive evaluation of the purity and defect density of a SWCNT sample.