Research Article

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuO𝑥 Metal Nanocrystal Capacitors

Figure 2

(a) HRTEM image of R u O 𝑥 nanolayer; (b) atomic concentration profiles by EDX from TEM image (a); (c) HRTEM image of RuOx nanocrystals at PDA 850°C; (d) atomic concentration profiles by EDX from TEM image (c) in an n–Si/SiO2/HfO2/ R u O 𝑥 /Al2O3/Pt structure. The beam positions are indicated as shown in the HRTEM images.
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