Research Article

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuO𝑥 Metal Nanocrystal Capacitors

Figure 7

(a) XPS spectra of the Hf4f electrons with different annealing temperatures from 850–1000°C; (b) XPS spectra of the Si2p electrons at the PDA of 850°C and 1000°C.
810879.fig.007a
(a)
810879.fig.007b
(b)