Research Article
Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited Metal Nanocrystal Capacitors
Table 1
Thickness and characteristics of all memory capacitors after the annealing process.
| | Memory capacitors | PDA (°C) | SiO2 (nm) | HfO2 (nm) | (nm) | Al2O3 (nm) | Memory window at ±5 V | Memory window at ±7 V | Breakdown voltage (V) |
| | S1 | 850 | 3.5 | 1 | 3 | 17 | 1.8 V | 4.0 V | −15 | | S2 | 900 | 3.5 | 1 | 3 | 17 | 8.0 V | 11.1 V | −14 | | S3 | 950 | 3.5 | 1 | 4 | 17 | 7.5 V | 10.8 V | −14 | | S4 | 1000 | 4.0 | 1 | 4 | 17 | 5.2 V | 8.6 V | −13.4 |
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