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Journal of Nanomaterials
Volume 2011, Article ID 903176, 4 pages
Research Article

Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction

Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

Received 15 June 2011; Revised 4 August 2011; Accepted 11 August 2011

Academic Editor: Renzhi Ma

Copyright © 2011 Sheng-Po Chang and Ting-Hao Chang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.