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Journal of Nanomaterials
Volume 2012 (2012), Article ID 127646, 4 pages
Research Article

Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

Received 14 March 2012; Revised 17 June 2012; Accepted 18 June 2012

Academic Editor: Gong Ru Lin

Copyright © 2012 Sheng-Po Chang and San-Syong Shih. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.