Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging

<table class="table-group" id="tab3"><tr><td><table class="table"><tr><td class="thead-hr" colspan="3"><hr/></td></tr><tr class="thead"><td align="left">Leg</td><td align="center">Element</td><td align="center">Atomic %</td></tr><tr><td class="thead-hr" colspan="3"><hr/></td></tr><tr><td align="left" rowspan="5">3 (Green mold compound)</td><td align="center">O</td><td align="center">1.48</td></tr><tr><td align="center">Al</td><td align="center">11.02</td></tr><tr><td align="center">Si</td><td align="center">0.98</td></tr><tr><td align="center">Cu</td><td align="center">83.14</td></tr><tr><td align="center">Ta</td><td align="center">3.38</td></tr><tr class="table-tr"><td colspan="3"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

EDX analysis of CuAl IMC crack region post-UHAST 96 hr opens: green mold compound (Leg 3).

Journal of Nanomaterials

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Table 3

Table 3: Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging 