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Journal of Nanomaterials
Volume 2012, Article ID 241470, 6 pages
http://dx.doi.org/10.1155/2012/241470
Research Article

Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models

1Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
2Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
3Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China
4Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK

Received 18 July 2011; Accepted 4 October 2011

Academic Editor: Shafiul Chowdhury

Copyright © 2012 Chun Zhao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chun Zhao, C. Z. Zhao, Jing Tao, M. Werner, S. Taylor, and P. R. Chalker, “Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models,” Journal of Nanomaterials, vol. 2012, Article ID 241470, 6 pages, 2012. https://doi.org/10.1155/2012/241470.