Robustness Comparison of Emerging Devices for Portable Applications

Table 2

Effect of PVT variation on device performance parameter.

Parameter variation	32 nm CNFET				32 nm FinFET
	%variation in device parameters
	𝐼on	𝐼off	𝐼on/𝐼off	𝑃av	𝐼on	𝐼off	𝐼on/𝐼off	𝑃av
±10% variation in 𝑇OX	10	0.1	15.79	8.32	15.17	16.91	15.08	17.2
±10% variation in 𝐿𝑔	12.18	11.77	4.62	11.84	40.56	47.87	11.74	40.8
±10% variation in 𝑉DD	66.31	0.6	66.1	74.26	65.69	19.26	57.53	72.03
±10% variation in 𝑇	9.89	10.31	7.02	15.21	14.28	15.09	16.4	8.76