A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption
Figure 2
(a) The direct heating procedures for heating up the substrate directly to 850°C for the growth of SiNWs, and (b) the ramp-cooling procedures for annealing in H2 at 650°C, followed by cooling from 650°C to 600°C at 10°C/min and further heating in H2/Ar/SiCl4 to 850°C for the SiNW growths.
