A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption

Figure 3

Plan-view and cross-sectional SEM images of the SiNWs grown employing the direct-heating procedures in Figure 2(a) using various concentrations of SiCl₄ at the 1st/2nd/3rd stages: (a) 0.3/0.3/0.3%, (b) 0.3/0.5/0.5%, (c) 0.3/0.5/1.0%, and (d) 1.0/1.0/1.0% without H₂ annealing process. The total gas flow rate was 200 sccm.

(a)

(b)

(c)

(d)