A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption

<table>The growth rates of the vertically aligned SiNWs on Si (111) at various growth periods for the SiNW growth at 850°C employing the ramp-cooling procedures.</table>

Journal of Nanomaterials

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Figure 7

Figure 7: A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption 