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Journal of Nanomaterials
Volume 2012, Article ID 409123, 6 pages
Research Article

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

1Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Section 3, Chung-Hsiao E. Road, Taipei 106, Taiwan
2Key Laboratory of Interface Science and Engineering in Advanced Materials, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, 79 W. Yingze Street, Shanxi, Taiyuan, China

Received 30 May 2012; Accepted 5 September 2012

Academic Editor: Jinquan Wei

Copyright © 2012 Lung-Chien Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.