Orientation of One-Dimensional Silicon Polymer Films Studied by X-Ray Absorption Spectroscopy
Figure 3
Si K-edge NEXAFS spectra for the samples deposited on HOPG substrate with different thickness: (a) 1.25 nm and (b) 1.80 nm. The NEXAFS spectra were recorded by the total electron yield mode at the different incident angles θ of the SR beam. Definition of the incidence angle θ is shown inside of this figure.
