The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of Thin Films
Figure 4
X-ray diffraction patterns of the zinc titanates thin films deposited at RF power: 200 W, substrate temperature of 400°C, and then annealed at 800°C with different Ar to O2 ratio (a) 10 : 0, (b) 9 : 1 and (c) 8 : 2.
