Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing
Figure 3
(a) Cross-sectional HRTEM image of 50-period 2 nm SiO1.0/2 nm SiO2 MLs after annealing at 1100°C. (b) FWHMs of normalized PL spectra for ML and SL samples with the same total thickness of 200 nm. (c) Size-dependent PL peak energy and FWHMs of ML and SL samples.
