Research Article

Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

Figure 3

XRD patterns of tungsten oxide thin films prepared at 400, 500, 600°C indicating the formation of h-WO3, m-WO3, and o-WO3. The peak at 15.5 nm−1, indicated by *, is emerging from the ITO layer (c).
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