Influence of Weight Ratio of Poly(4-vinylphenol) Insulator on Electronic Properties of InGaZnO Thin-Film Transistor

Figure 2

Capacitance-voltage characteristics of n⁺Si/PVP/Au MIS diode at 1 MHz. The arrows indicate the sweep direction of the gate bias voltage with PVP : PMF ratios of (a) 20 : 1, (b) 10 : 1, and (c) 5 : 1.

(a)

(b)

(c)