Improving the RF Performance of Carbon Nanotube Field Effect Transistor

<table>The used geometries for calculating the parasitic capacitance per nanotube <svg height="14.4375" id="M133" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 30.075001 14.4375" width="30.075001" xmlns="http://www.w3.org/2000/svg">
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<tspan style="font-size: 12.50px; " x="0" y="0">𝐶</tspan>
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<text transform="matrix(1,0,0,-1,-63.56,60.58)">
<tspan style="font-size: 8.75px; " x="0" y="0">t</tspan>
<tspan style="font-size: 8.75px; " x="2.4330561" y="0">u</tspan>
<tspan style="font-size: 8.75px; " x="6.8090558" y="0">b</tspan>
<tspan style="font-size: 8.75px; " x="11.185056" y="0">e</tspan>
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Journal of Nanomaterials

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Figure 7

Figure 7: Improving the RF Performance of Carbon Nanotube Field Effect Transistor 