Improving the RF Performance of Carbon Nanotube Field Effect Transistor

Table 2

CNTFET parameters.

Parameter	Name	Value	Unit
𝑛	Helicity parameter	19
𝑚	Helicity parameter	0
𝑑	Diameter	1.49×10^−9	m
𝑇	Temperature	300	K
𝑅𝑑	Drain contact resistance	17×10^3	Ω
𝑅𝑠	Source contact resistance	23×10^3	Ω
𝑅𝑔	Gate contact resistance	10	Ω
𝐿	Nanotube length	8250×10^−9	m
𝑉FB	Flat band potential	−40×10^−3	V
𝐶𝐼	Gate oxide capacitance	100×10^−12	F/m
𝐶DE	Drain capacitance	0.1×10^−18	F
𝐶SE	Source capacitance	0.1×10^−18	F
𝐶GS	Gate-source capacitance	87.5×10^−15	F
𝐶GD	Gate-drain capacitance	87.5×10^−15	F
𝑛tube	Number of tubes	16	—
𝑛finger	Number of finger	25	—