On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

Figure 5

FTIR absorption spectra of SRO films (a) before and (b) after thermal annealing. The inset shows Si–N and Si–H bonding in the 850–1300 cm⁻¹ and 2200–2300 cm⁻¹ ranges, respectively.

(a)

(b)