Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors
Figure 3
A comparison of high-frequency C-V curves with and without N2 PDA treatment. MOSCs with [Au/NdAlOx/SiO2/n-Si/Al] structure were fabricated with an effective area of 4.9 × 10−4 cm−2. The inset is a plot of capacitance equivalent thickness (CET) versus NdAlOx physical thickness, which shows an increase in the dielectric permittivity (7 to 12) and changes of the interfacial layer (1.5 to 2.5 nm) after PDA treatment.
