Table 2: Main features of optical fabrication methods of SiC.

Optical fabrication of silicon carbidePrincipleCharacteristicExample

Mechanical polishingMechanical friction and material removalLow efficiencyThe final surface accuracy of 1 nm RMS was reported by Paquin et al. [3]
Wet polishingPolished mold is immersed in the slurry, RMS becomes lower by an abrasiveHigh surface accuracyThe final surface accuracy of 0.75 nm RMS was reported by Xu et al. [4]
Ultraprecision grindingDuctility grinding Equipment require high Bifano et al. [5] has used CVD SiC to obtain the 5.5 nm RMS
Tribochemical polishingThe tribochemical reactionLow efficiencyIn [6], final surface accuracy of 1 nm RMS
Electrolytic in-process
dressing (ELID)
The electrolysis process so that the grinding wheel functionsGood surface qualityIn [7], final surface accuracy of 1.4 nm RMS
Chemical mechanical Polishing (CMP)Combination of mechanical grinding and chemical etchingGood surface quality, but is corrosiveIn [8], final surface accuracy of 0.5 nm RMS
Magneto rheological Finishing (MRF)Magnetorheological polishing fluid viscosity increases the shear force generated for material removal in the magnetic field gradientLow efficiency
Johnson et al. have used this method to fabricate CVD SiC [9]
Laser-induced photochemical polishingLaser-induced photochemical reactionsHigh efficiency, but is corrosiveThe final surface accuracy of 80 nm RMS was reported by Murahara [10]
Ion beam millingHigh-speed ion beam hits the surface of the sampleGood surface quality, expensive equipment The final surface accuracy of 1 nm RMS was reported by Johnson et al. [11]
Float polishingThe sample is floating on the polishing plate by the high-speed rotating fluid dynamic pressureGood surface qualityIn [12], final surface accuracy of 3 nm RMS