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| Optical fabrication of silicon carbide | Principle | Characteristic | Example |
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| Mechanical polishing | Mechanical friction and material removal | Low efficiency | The final surface accuracy of 1 nm RMS was reported by Paquin et al. [3] |
| Wet polishing | Polished mold is immersed in the slurry, RMS becomes lower by an abrasive | High surface accuracy | The final surface accuracy of 0.75 nm RMS was reported by Xu et al. [4] |
| Ultraprecision grinding | Ductility grinding |
Equipment require high |
Bifano et al. [5] has used CVD SiC to obtain the 5.5 nm RMS |
| Tribochemical polishing | The tribochemical reaction | Low efficiency | In [6], final surface accuracy of 1 nm RMS |
Electrolytic in-process
dressing (ELID) | The electrolysis process so that the grinding wheel functions | Good surface quality | In [7], final surface accuracy of 1.4 nm RMS |
| Chemical mechanical Polishing (CMP) | Combination of mechanical grinding and chemical etching | Good surface quality, but is corrosive | In [8], final surface accuracy of 0.5 nm RMS |
| Magneto rheological Finishing (MRF) | Magnetorheological polishing fluid viscosity increases the shear force generated for material removal in the magnetic field gradient | Low efficiency
|
Johnson et al. have used this method to fabricate CVD SiC [9] |
| Laser-induced photochemical polishing | Laser-induced photochemical reactions | High efficiency, but is corrosive | The final surface accuracy of 80 nm RMS was reported by Murahara [10] |
| Ion beam milling | High-speed ion beam hits the surface of the sample | Good surface quality, expensive equipment | The final surface accuracy of 1 nm RMS was reported by Johnson et al. [11] |
| Float polishing | The sample is floating on the polishing plate by the high-speed rotating fluid dynamic pressure | Good surface quality | In [12], final surface accuracy of 3 nm RMS
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