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Journal of Nanomaterials
Volume 2013, Article ID 124354, 7 pages
http://dx.doi.org/10.1155/2013/124354
Research Article

Influence of Electric Field Coupling Model on the Simulated Performances of a GaN Based Planar Nanodevice

1Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Received 18 October 2013; Revised 18 December 2013; Accepted 19 December 2013

Academic Editor: Razali Ismail

Copyright © 2013 K. Y. Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

K. Y. Xu, Z. N. Wang, Y. N. Wang, J. W. Xiong, and G. Wang, “Influence of Electric Field Coupling Model on the Simulated Performances of a GaN Based Planar Nanodevice,” Journal of Nanomaterials, vol. 2013, Article ID 124354, 7 pages, 2013. https://doi.org/10.1155/2013/124354.